BUK7Y07-30B Datasheet, NXP Semiconductors

* Low conduction losses due to low on-state resistance
* Q101 compliant
* Suitable for standard level gate drive sources
* Suitable for thermally demandin.

1.2 Features and benefits
* Low conduction losses due to low on-state resistance
* Q101 compliant
* Suitab.

Standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using NXP High-Performance Automotive (HPA) TrenchMOS technology. This product has been designed and qualified to the appropriate AEC standard for use in aut.